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GD3160 Datasheet(PDF) 5 Page - NXP Semiconductors |
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GD3160 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 114 page ![]() NXP Semiconductors GD3160 Advanced IGBT/SiC gate driver 5 Ordering information Part number [1] VDD External clearance and creepage distance [2] Material (isolation) group [3] FSISO option (Gate state when FSISO is activated) Temperature (TJ) Package MGD3160AM515EK 5.0 V > 7.72 mm II Gate ON MGD3160AM518EK 5.0 V > 8.0 mm I Gate ON MGD3160AM535EK 5.0 V > 7.72 mm II Gate 3-STATE MGD3160AM538EK 5.0 V > 8.0 mm I Gate 3-STATE MGD3160AM315EK 3.3 V > 7.72 mm II Gate ON MGD3160AM318EK 3.3V > 8.0 mm I Gate ON MGD3160AM335EK 3.3 V > 7.72 mm II Gate 3-STATE MGD3160AM338EK 3.3 V > 8.0 mm I Gate 3-STATE −40 °C to 150 °C 32-pin wide body SOIC, 0.65 mm pitch Table 1. Orderable part variations [1] To order parts in tape and reel, add the R2 suffix to the part number. To order parts in tray packing, add the T suffix to the part number. [2] per IEC 60950-1 Tables 2K and 2N [3] per IEC 60664-1 GD3160 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 6 May 2024 5 / 114 |
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