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GD3160 Datasheet(PDF) 49 Page - NXP Semiconductors |
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GD3160 Datasheet(HTML) 49 Page - NXP Semiconductors |
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49 / 114 page ![]() NXP Semiconductors GD3160 Advanced IGBT/SiC gate driver aaa-037335 R1 R3 C1 Collector Emitter GND2 ISENSE OCTH[2:0] Over current sense threshold OCFILT[2:0] Over current filter oc Over current detect Short circuit detect SCTH[2:0] SC Threshold level SC comparator OC comparator SET CLR S reset via SPI R Q Q tOC_FILT, OC filter 0.5 to 4.0 µs SCFILT[2:0] SC filter time SCFF[0] SC “Fast filter mode sc (reported via INT and SPI, forces soft shutdown) 2LTOen (activates 2LTO) SET CLR S reset via SPI R Q Q tSC_FILT, SC filter 0.1 to 1.1 µs t2LTO_FILT, 2LTO deglitch filter fixed 40 ns OCTH 0.25 to 2.0 V SCTH 0.5 to 3.0 V R2 Figure 17. Short-circuit and overcurrent detection block diagram Implementing short-circuit and overcurrent protection with this circuitry is fairly straightforward. R1, R2, SCTH, and OCTH are selected based on the IGBT's current sense ratio and the desired SC and OC fault thresholds. The SC and OC fault thresholds are set to less than the IGBT's expected VCE(sat). The circuit responds differently to a short-circuit versus an overcurrent fault. If the short-circuit comparator trips for longer than t2LTO_FILT, the GD3160 initiates a 2LTO by immediately reducing the IGBT's VGE to a lower value. If the comparator remains tripped for a programmable duration (tSC_FILT), then the fault is latched and the IGBT is turned off by the SSD circuitry. If the comparator does not remain tripped, the gate-drive transistor GH turns on once again and returns VGE to its normal on-state voltage. For full short-circuit protection performance, enabling both 2LTO and SSD is recommended to achieve the described operation. GD3160 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 6 May 2024 49 / 114 |
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