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GD3160 Datasheet(PDF) 55 Page - NXP Semiconductors |
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GD3160 Datasheet(HTML) 55 Page - NXP Semiconductors |
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55 / 114 page ![]() NXP Semiconductors GD3160 Advanced IGBT/SiC gate driver aaa-048976 ON HV DC Supply VCE GND2 VGE VDESAT PWM GH enable GL enable AMC enable IDESAT enable IDESAToff enable ISSD enable Fault must be cleared via SPI, etc. INTB tSSD (timeout) tLATCH tfltdly tSCFILT tDESAT_LEB tON_DLY_GH ~VCE(on) + 0.7 V tDESAT_FILT DESAT_TH Fault occurs Gate OFF SSD OFF 2LTO VVCCREG V2LTO AMC_TH tSSD_ACT Figure 23. DESAT fault timing (2LTO = 1, SSD = 1), RTMON_CFG = 0 11.6 VCE overvoltage protection 11.6.1 Introduction The GD3160 contains two provisions that protect the power device from VCE or VDS overvoltage scenarios. 1. Advanced active clamp 2. Segmented drive operation Advanced active clamp is intended to alter the gate drive in the presence of a high VCE/VDS condition, typically by means of high-voltage Zeners directly connected to the collector or drain. The GD3160 active clamp fault response may be configured as non-latching (default behavior, single-cycle intervention and continue PWMing) GD3160 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 6 May 2024 55 / 114 |
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