GD3160 datasheet(67/114 Pages) NXP

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NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

11.11.2 Features

One of the three temperature sense circuits monitors the VDD regulator temperature on the low-voltage domain.

A circuit on the high-voltage domain monitors the temperature near the GH drive transistor, the VCCREG pass

transistor, and the VREF regulator. A second circuit on the high-voltage domain monitors the temperature near

the GL and AMC transistors.

Any of the three temperature sensors can trigger an overtemperature shutdown of the IC. When the GD3160's

temperature reaches its overtemperature shutdown threshold, TOTSDth, the GD3160 reports the condition at the

INTB pin and in the OTSD_IC bit in the STATUS1 register.

Regardless of the fault's source, an overtemperature signal disables PWMing by turning off the GH transistor

and turning on the GL and AMC transistors (if the AMC feature is enabled). If the condition is detected on the

high-voltage domain, the GD3160 turns off GH, VCCREG and VREF. If the VDD regulator is reporting the

condition, the VDD regulator remains on. This leaves open the possibility that the MCU can manage the fault.

All overtemperature shutdown circuits have a low pass filter, tOTICfilt; its nominal value is 20 μs. The specification

is provided in the Section 9.3.

There are two ways to read the voltage reported by the GH temperature sensor.

1. Send a REQADC SPI command requesting GH die temperature in AMUX_SEL[2:0] bits

2. Configure the AOUT pin to report die temperature at 5.6 kHz using the AOUT configuration bits in the

CONFIG5 and CONFIGAOUT registers.

Figure 33 shows the block diagram of the temperature sensing circuitry on the GD3160.

Figure 33. GD3160 overtemperature block diagram

The internal die temperature at GH can be determined by Equation 2.

(2)

GD3160

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Product data sheet

Rev. 13 — 6 May 2024

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GD3160 Datasheet(PDF) 67 Page - NXP Semiconductors