 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
GD3160 Datasheet(PDF) 12 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
GD3160 Datasheet(HTML) 12 Page - NXP Semiconductors |
|
|
12 / 114 page  NXP Semiconductors GD3160 Advanced IGBT/SiC gate driver 8.4 Isolation and safety related specifications Symbol Description (Rating) Value Unit MGD3160AM515EK, MGD3160AM535EK, MGD3160AM315EK and MGD3160AM335EK CLR External clearance distance [1] > 7.72 mm CPG External creepage distance [2] > 7.72 mm DTI Internal clearance (Gap) distance through insulation > 80 µm CTI Comparative tracking index [3] > 400 V MGroup Material (isolation) group [4] II — IEC150 IEC300 IEC600 Installation classification Mains voltage ≤ 150 VRMS Mains voltage ≤ 300 VRMS Mains voltage ≤ 600 VRMS [5] I to IV I to III I to II — MGD3160AM518EK, MGD3160AM538EK, MGD3160AM318EK and MGD3160AM338EK CLR External clearance distance [1] > 8.00 mm CPG External creepage distance [2] > 8.00 mm DTI Internal clearance (Gap) distance through insulation > 80 µm CTI Comparative tracking index [3] > 600 V MGroup Material (isolation) group [4] I — IEC150 IEC300 IEC600 Installation classification Mains voltage ≤ 150 VRMS Mains voltage ≤ 300 VRMS Mains voltage ≤ 600 VRMS [5] I to IV I to III I to II — Table 7. Insulation specifications [1] per IEC 60950-1 Table 2K [2] per IEC 60950-1 Table 2N [3] per DIN IEC 112/VDE 0303 Part 1 [4] per IEC 60664-1 [5] per IEC 60664-1 Table F.1 Symbol Description (Rating) Value Units CCLASS Climatic classification 40/125/21 — PDEGREE Pollution degree 2 — VIORM Maximum repetitive peak isolation voltage 1500 Vpk VIOWM Maximum working isolation voltage 1060 VRMS VIOTM Maximum transient isolation voltage [1] 4000 Vpk VIOTM Maximum transient isolation voltage [2] 8000 Vpk VIOSM Maximum surge isolation voltage [3] 10000 Vpk Input to output test voltage 100 % test method B1 [4] 2812 Vpk Input to output test voltage type test method A [5] 2400 Vpk VPD(m) Input to output test voltage type test subgroups 1 to 3 [6] 1800 Vpk CIO Barrier capacitance, input to output < 3 pF RIO Insulation resistance at Ts, VIO = 500 V > 109 Ω TS Maximum junction temperature 150 °C PS Safe total dissipated power 0.38 W VISO Withstand isolation voltage (1 minute) [7] 5000 VRMS Table 8. DIN V VDE 0884-10 (VDE V 0884-10) insulation characteristics [1] For part numbers MGD3160AM515EK, MGD3160AM535EK, MGD3160AM315EK, and MGD3160AM335EK [2] For part numbers MGD3160AM518EK, MGD3160AM538EK, MGD3160AM318EK, and MGD3160AM338EK GD3160 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 6 May 2024 12 / 114 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
