GD3160
Advanced IGBT/SiC gate driver
Rev. 13 — 6 May 2024
Product data sheet
1 General description
The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices. Integrated Galvanic
isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic
saturation voltage and rail-to-rail gate voltage control.
Current and temperature sense minimizes IGBT/SiC stress during faults. Accurate and configurable
undervoltage lockout (UVLO) provides protection while ensuring sufficient gate-drive voltage headroom.
The GD3160 autonomously manages severe faults and reports faults and status via INTB and/or INTA pins
and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self test, control,
and protection functions are included for design of high-reliability systems (ASIL C/D). The GD3160 meets the
stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.
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