GD3160 datasheet(46/114 Pages) NXP

46 / 114 page

NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

11.3.3 Types of gate drive

11.3.3.1 Normal mode turn on and turn off

When the voltage at the PWM pin goes high, the signal is deglitched by an input pulse suppression filter (tMIN).

Once the signal is validated, all pulldown transistors (GL, AMC, SSD) are turned off and GH is turned on. VCE

desaturation faults are blanked for tDESAT_LEB. Once tDESAT_LEB expires, IDESAT is turned on to monitor the

collector-emitter voltage. The SSD (soft shutdown) and the two-level turn-off (2LTO) circuits are not activated

during non-faulted switching.

When the voltage at the PWM pins goes low (the same 40 ns deglitch filter is applied) pullup transistor GH is

turned off and the primary pulldown transistor, GL, is turned on and the gate resistor in series with the GL pin

controls turn-off speed.

11.3.3.2 Soft shutdown

The GD3160 includes integrated soft shutdown (SSD) functionality, which is a current-limited turn-off

functionality, used for fault handling and specific turn-off scenarios.

The soft shutdown operation turns the power device gate off more slowly than normal turn-off: this reduces fast

or high di/dt in the load current, and reduces VCE overshoot and SOA stress on the power device.

The SSD circuit is connected between the GL and VEE pins. Table 14 and Section 11.13 provide details of the

ISSD programming options.

For controlled operation, soft shutdown is usually only run for a fixed time, or until the active Miller clamp can

activate. There is a capacity to program the duration (SSDT parameter) and utilize a "fast" mode (TIME_2

configuration bit) for low gate charge devices, like SiC MOSFETs.

Soft shutdown can be enabled or disabled in the MODE1 register. It is recommended that soft shutdown be

enabled (set SSD = 1) for all manner of power devices, including IGBTs, SiC MOSFETs, and so on. All power

devices benefit from the reduced voltage stress provided by soft shutdown gate current. Soft shutdown is used

in many different functions. It is especially required to be enabled (SSD = 1 in the MODE1 register) for the

following applications:

• Driving an IGBT (SSD reduces voltage stress, which cannot exceed maximum VCE)

• Driving fast-switching MOSFETs safely (SSD reduces voltage stress during turn-off events)

• Using the overcurrent feature (OCSNS = 1) based on the ISENSE pin. SSD is used to shut down an

overcurrent condition.

• Using the segmented drive function (SEGDRV = 1). SSD is used to mitigate potential VCE overvoltage.

• Using the active clamp (ACTCLMP = 1). SSD is used during gate turn-off during VCE overvoltage clamp

event.

11.3.3.3 Two-level turn-off

The GD3160 includes a two-level turn-off (2LTO) feature that momentarily reduces the gate voltage and limits

the maximum collector current while validating a fault condition.

The 2LTO feature may be enabled or disabled using the 2LTO bit in the MODE1 register, depending on

application needs.

The GD3160 must have two-level turn-off enabled (set 2LTO = 1) in the following applications:

• Driving an IGBT (2LTO ideally handles the plateau region while turning off substantial collector current)

• Devices with integrated current mirror (connected to the ISENSE pin)

The 2LTO feature can be useful, but is not absolutely required (may set 2LTO = 0), in the following applications:

GD3160

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 13 — 6 May 2024

46 / 114

GD3160 Datasheet(PDF) 46 Page - NXP Semiconductors

GD3160 Datasheet(HTML) 46 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL