GD3160 datasheet(64/114 Pages) NXP

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NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

aaa-044406

OFF

Power

device

GND2

VCE

PWM

DESAT

IDESAT

enable

IDESAToff

enable

VCE Status

reported to INTA

tRTRPT_DLY

tDESAT_FLT

DESAT_TH

HV DC supply

tDESAT_LEB

~VCE(on) + 0.7 V

Figure 30. INTA as a real-time VCE reporter

When the GD3160 is configured for real-time reporting (RTRPT = 1 and RTMON_CFG = 1), the IDESAT current

source is always on, except during the DESAT leading edge blanking time, and when segmented drive is

activated during turn-off. INTA reports a high VCE/VDS after segmented drive has completed during the turn-off.

The desaturation fault detection is active and monitored in parallel at the same time as the real-time. There is no

interference or exclusivity between desaturation fault detection and the real-time VCE/VDS report.

11.9.4 INTA real-time VGE reporting

When INTA is configured as a real-time VGE reporter, the INTA pin is transistor-driven to VDD and GND1, and

reports gate high/low status, as seen at the AMC pin. The AMC will therefore need to be directly connected to

the power device gate pin, even if the active Miller clamp function is disabled.

An example of real-time gate voltage reporting is shown in Figure 31.

GD3160

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 13 — 6 May 2024

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GD3160 Datasheet(PDF) 64 Page - NXP Semiconductors