GD3160 datasheet(13/114 Pages) NXP

13 / 114 page

NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

[3]

per IEC 60065, 1.2 µ/50 µs waveform

[4]

Vini = VIOTM, tini = 1 s

VPD(m) = VIORM x 1.875, tm = 1 s, Partial discharge < 5pC

[5]

Vini = VIOTM, tini = 60 s

VPD(m) = VIORM x 1.6, tm = 10 s, Partial discharge < 5pC

[6]

Vini = VIOTM, tini = 60 s

VPD(m) = VIORM x 1.2, tm = 10 s, Partial discharge < 5pC

[7]

VTEST = VISO = 5000 VRMS, t = 60 s (NXP qualification)

VTEST = 2500 VRMS(4243Vpk), t = 1 s (100 % production) (MGD3160AM515EK, MGD3160AM535EK, MGD3160AM315EK and MGD3160AM335EK)

VTEST = 5000 VRMS(8500Vpk), t = 1 s (100 % production) (MGD3160AM518EK, MGD3160AM538EK, MGD3160AM318EK and MGD3160AM338EK)

The GD3160 uses the same isolation technology as GD3100, but device certification and manufacturing

certification are still pending until the device goes into production for the component programs listed in Table 9.

Standard

Approval

UL 1577

Certified 5.0 kV rms for 1 min single protection, 5.0 kV rms.

VDE 0884-10

Tested in accordance with DIN V VDE V 0884-10 reinforced isolation, 1.5 kV peak.

Table 9. Regulatory information

GD3160

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 13 — 6 May 2024

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GD3160 Datasheet(PDF) 13 Page - NXP Semiconductors