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DA6021 Datasheet(PDF) 126 Page - Renesas Technology Corp

Part # DA6021
Description  HIGHLY INTEGRATED POWER MANAGEMENT IC FOR INTEL® ATOM™ Z3000 PROCESSOR
PDF  225 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

DA6021 Datasheet(HTML) 126 Page - Renesas Technology Corp

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DA6021
HIGHLY INTEGRATED POWER MANAGEMENT IC FOR
INTEL® ATOM™ Z3000 PROCESSOR
Company Confidential
Data Sheet
Version 3.A - Final
31-Jan-14
© 2014 Dialog Semiconductor GmbH
126 of 224
www.dialog-semiconductor.com
14. Power Source Detection
Overview
14.1
There are three input supply sources that can be detected by DA6021: VBAT, VDCIN_SENSE and
VBUS_SENSE referring respectively to the battery, AC adapter and USB connector. For all power sources
dedicated comparators are used for the power detection. All detectors include de-bounce logic with a nominal
time period of 100ms which can be disabled by software.
VBAT Power Source Detection
14.2
Battery Voltage Monitor & Removal / Insertion Detection
14.2.1
Figure 60: VBAT Input Detection
It is advantageous to use a battery pack with integrated BSI resistance (pull-down in the battery pack indicating
the ID or size) as it offers an advanced warning on battery removal events. Such an implementation is necessary
to meet the SDWN_B signal timing requirement of some modem SIM cards.
During normal operation (battery pack present/inserted), the BSI resistance in the battery pack pulls the analog
voltage at the BATID pin to an intermediate voltage, between VREF (ADC bias voltage from the VREFB pin) and
GND. When the BSI terminal of the battery pack no longer makes contact (as on removal), BATID is immediately
pulled high to VREF by the measurement resistance on the platform, RMBI (30KΩ to 200KΩ).
While using the BATID comparator sensing the battery insertion / removal, there are separate de-bounce times
for insertion and removal. This provides sufficient power-up time for USB PHY related components on insertion,
on the other hand it allows a quick detection time of battery removal for SIM card early warning (via SDWN_B).
Note that BAITD comparator is giving a low output if the battery is removed.
When BATRMSRC=1 (using BATID comparator), the thresholds in the table below define the present/absent
voltage trip points. Note that when using the BATID comparator to sense battery insertion / removal, there are
separate debounce times for insertion and removal. This is to allow for sufficient power-up sequencing of USB
PHY related components on insertion, and also allow for quick detection of battery removal for SIM card early
warning (via SDWN_B).
Parameter
Description
Min
Typ
Max
Unit
Val
V’BATIDREFH
BATID Rising threshold ( L->H,
indicating battery removal)
Typ-
0.025
0.9*Vref
Typ+
0.025
V
A
V’BATIDREFL
BATID Falling threshold ( H->L,
indicating battery insertion)
Typ-
0.025
0.8*Vref
Typ+
0.025
V
A
tDEBOUNCE
insert
BATID Presence Comparator
Debouncing Time (Insertion)
90
100
110
ms
A
tDEBOUNCE
remove
BATID Presence Comparator
Debouncing Time (Removal)
30
62
µs
A
VBAT
analog
external
digital
VBATRMREF
2.0V
– 2.1V
sync
Debounce
100ms
BATIDREF
0.8VREF - 0.9VREF
sync
Debounce
(insert) 100ms
(removal) 30 - 60 us
BATID
0
1
PSDETCFG:
BATRMSRC



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