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DA6021 Datasheet(PDF) 126 Page - Renesas Technology Corp |
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DA6021 Datasheet(HTML) 126 Page - Renesas Technology Corp |
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126 / 225 page ![]() DA6021 HIGHLY INTEGRATED POWER MANAGEMENT IC FOR INTEL® ATOM™ Z3000 PROCESSOR Company Confidential Data Sheet Version 3.A - Final 31-Jan-14 © 2014 Dialog Semiconductor GmbH 126 of 224 www.dialog-semiconductor.com 14. Power Source Detection Overview 14.1 There are three input supply sources that can be detected by DA6021: VBAT, VDCIN_SENSE and VBUS_SENSE referring respectively to the battery, AC adapter and USB connector. For all power sources dedicated comparators are used for the power detection. All detectors include de-bounce logic with a nominal time period of 100ms which can be disabled by software. VBAT Power Source Detection 14.2 Battery Voltage Monitor & Removal / Insertion Detection 14.2.1 Figure 60: VBAT Input Detection It is advantageous to use a battery pack with integrated BSI resistance (pull-down in the battery pack indicating the ID or size) as it offers an advanced warning on battery removal events. Such an implementation is necessary to meet the SDWN_B signal timing requirement of some modem SIM cards. During normal operation (battery pack present/inserted), the BSI resistance in the battery pack pulls the analog voltage at the BATID pin to an intermediate voltage, between VREF (ADC bias voltage from the VREFB pin) and GND. When the BSI terminal of the battery pack no longer makes contact (as on removal), BATID is immediately pulled high to VREF by the measurement resistance on the platform, RMBI (30KΩ to 200KΩ). While using the BATID comparator sensing the battery insertion / removal, there are separate de-bounce times for insertion and removal. This provides sufficient power-up time for USB PHY related components on insertion, on the other hand it allows a quick detection time of battery removal for SIM card early warning (via SDWN_B). Note that BAITD comparator is giving a low output if the battery is removed. When BATRMSRC=1 (using BATID comparator), the thresholds in the table below define the present/absent voltage trip points. Note that when using the BATID comparator to sense battery insertion / removal, there are separate debounce times for insertion and removal. This is to allow for sufficient power-up sequencing of USB PHY related components on insertion, and also allow for quick detection of battery removal for SIM card early warning (via SDWN_B). Parameter Description Min Typ Max Unit Val V’BATIDREFH BATID Rising threshold ( L->H, indicating battery removal) Typ- 0.025 0.9*Vref Typ+ 0.025 V A V’BATIDREFL BATID Falling threshold ( H->L, indicating battery insertion) Typ- 0.025 0.8*Vref Typ+ 0.025 V A tDEBOUNCE insert BATID Presence Comparator Debouncing Time (Insertion) 90 100 110 ms A tDEBOUNCE remove BATID Presence Comparator Debouncing Time (Removal) 30 62 µs A VBAT analog external digital VBATRMREF 2.0V – 2.1V sync Debounce 100ms BATIDREF 0.8VREF - 0.9VREF sync Debounce (insert) 100ms (removal) 30 - 60 us BATID 0 1 PSDETCFG: BATRMSRC |
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