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G35 Datasheet(PDF) 35 Page - Intel Corporation

Part # G35
Description  Express Chipset
PDF  351 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

G35 Datasheet(HTML) 35 Page - Intel Corporation

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Signal Description
Datasheet
35
2.3
DDR2 DRAM Channel B Interface
Signal Name
Type
Description
SCLK_B[5:0]
O
SSTL-1.8
SDRAM Differential Clock: (3 per DIMM) SCLK_B and its
complement, SCLK_B#, make a differential clock pair output.
The crossing of the positive edge of SCLK_B and the negative
edge of its complement SCLK_B# are used to sample the
command and control signals on the SDRAM.
SCLK_B[5:0]#
O
SSTL-1.8
SDRAM Complementary Differential Clock: (3 per DIMM)
These are the complementary differential DDR2 Clock signals.
SCS_B[3:0]#
O
SSTL-1.8
Chip Select: (1 per Rank) These signals select particular
SDRAM components during the active state. There is one Chip
Select for each SDRAM rank
SMA_B[14:0]
O
SSTL-1.8
Memory Address: These signals are used to provide the
multiplexed row and column address to the SDRAM.
SBS_B[2:0]
O
SSTL-1.8
Bank Select: These signals define which banks are selected
within each SDRAM rank
DDR2: 1-Gb technology uses 8 banks.
SRAS_B#
O
SSTL-1.8
Row Address Strobe: Used with SCAS_B# and SWE_B#
(along with SCS_B#) to define the SDRAM commands
SCAS_B#
O
SSTL-1.8
Column Address Strobe: Used with SRAS_B# and SWE_B#
(along with SCS_B#) to define the SDRAM commands.
SWE_B#
O
SSTL-1.8
Write Enable: Used with SCAS_B# and SRAS_B# (along
with SCS_B#) to define the SDRAM commands.
SDQ_B[63:0]
I/O
SSTL-1.8
Data Lines: SDQ_B signals interface to the SDRAM data bus.
SDM_B[7:0]
O
SSTL-1.8
Data Mask: When activated during writes, the corresponding
data groups in the SDRAM are masked. There is one SBDM for
every data byte lane.
SDQS_B[7:0]
I/O
SSTL-1.8
Data Strobes: For DDR2, SDQS_B, and its complement
,SDQS_B#, make up a differential strobe pair. The data is
captured at the crossing point of SDQS_B and its complement
SDQS_B# during read and write transactions.
SDQS_B[7:0]#
I/O
SSTL-1.8
Data Strobe Complements: These are the complementary
DDR2 strobe signals.
SCKE_B[3:0]
O
SSTL-1.8
Clock Enable: (1 per Rank) SCKE_B is used to initialize the
SDRAMs during power-up, to power-down SDRAM ranks, and
to place all SDRAM ranks into and out of self-refresh during
Suspend-to-RAM.
SODT_B[3:0]
O
SSTL-1.8
On Die Termination: Active On-die Termination Control
signals for DDR2 devices.



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