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G35 Datasheet(PDF) 35 Page - Intel Corporation |
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G35 Datasheet(HTML) 35 Page - Intel Corporation |
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35 / 351 page ![]() Signal Description Datasheet 35 2.3 DDR2 DRAM Channel B Interface Signal Name Type Description SCLK_B[5:0] O SSTL-1.8 SDRAM Differential Clock: (3 per DIMM) SCLK_B and its complement, SCLK_B#, make a differential clock pair output. The crossing of the positive edge of SCLK_B and the negative edge of its complement SCLK_B# are used to sample the command and control signals on the SDRAM. SCLK_B[5:0]# O SSTL-1.8 SDRAM Complementary Differential Clock: (3 per DIMM) These are the complementary differential DDR2 Clock signals. SCS_B[3:0]# O SSTL-1.8 Chip Select: (1 per Rank) These signals select particular SDRAM components during the active state. There is one Chip Select for each SDRAM rank SMA_B[14:0] O SSTL-1.8 Memory Address: These signals are used to provide the multiplexed row and column address to the SDRAM. SBS_B[2:0] O SSTL-1.8 Bank Select: These signals define which banks are selected within each SDRAM rank DDR2: 1-Gb technology uses 8 banks. SRAS_B# O SSTL-1.8 Row Address Strobe: Used with SCAS_B# and SWE_B# (along with SCS_B#) to define the SDRAM commands SCAS_B# O SSTL-1.8 Column Address Strobe: Used with SRAS_B# and SWE_B# (along with SCS_B#) to define the SDRAM commands. SWE_B# O SSTL-1.8 Write Enable: Used with SCAS_B# and SRAS_B# (along with SCS_B#) to define the SDRAM commands. SDQ_B[63:0] I/O SSTL-1.8 Data Lines: SDQ_B signals interface to the SDRAM data bus. SDM_B[7:0] O SSTL-1.8 Data Mask: When activated during writes, the corresponding data groups in the SDRAM are masked. There is one SBDM for every data byte lane. SDQS_B[7:0] I/O SSTL-1.8 Data Strobes: For DDR2, SDQS_B, and its complement ,SDQS_B#, make up a differential strobe pair. The data is captured at the crossing point of SDQS_B and its complement SDQS_B# during read and write transactions. SDQS_B[7:0]# I/O SSTL-1.8 Data Strobe Complements: These are the complementary DDR2 strobe signals. SCKE_B[3:0] O SSTL-1.8 Clock Enable: (1 per Rank) SCKE_B is used to initialize the SDRAMs during power-up, to power-down SDRAM ranks, and to place all SDRAM ranks into and out of self-refresh during Suspend-to-RAM. SODT_B[3:0] O SSTL-1.8 On Die Termination: Active On-die Termination Control signals for DDR2 devices. |
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