MSP430F5259 datasheet(22/107 Pages) TI1

22 / 107 page

MSP430F5259, MSP430F5258, MSP430F5257, MSP430F5256

MSP430F5255, MSP430F5254, MSP430F5253, MSP430F5252

SLAS903A – MAY 2013 – REVISED JULY 2013

www.ti.com

Spy-Bi-Wire Interface

In addition to the standard JTAG interface, the MSP430 family supports the two wire Spy-Bi-Wire interface. Spy-

Bi-Wire can be used to interface with MSP430 development tools and device programmers. The Spy-Bi-Wire

interface pin requirements are shown inTable 10. For further details on interfacing to development tools and

device programmers, see the MSP430™ Hardware Tools User's Guide (SLAU278). For a complete description

of the features of the JTAG interface and its implementation, see MSP430™ Programming Via the JTAG

Interface (SLAU320). Additional information can be found in Designing with MSP430F522x and MSP430F521x

Devices (SLAA558).

Table 10. Spy-Bi-Wire Pin Requirements and Functions

DEVICE SIGNAL

DIRECTION

FUNCTION

TEST/SBWTCK

Spy-Bi-Wire clock input

RSTDVCC/SBWTDIO

IN, OUT

Spy-Bi-Wire data input/output

DVCC, AVCC

Device power supply

DVIO

I/O power supply

DVSS

Ground supply

NOTE

Traditionally, on other MSP430 devices, the RST/NMI pin is used for SBWTDIO, so care

must be taken not to mistakenly use the incorrect pin. On the F525x series of devices, it is

required to use RSTDVCC for SBWTDIO as shown in Table 10. Additional information can

be found in Designing with MSP430F522x and MSP430F521x Devices (SLAA558).

Flash Memory (Link to user's guide)

The flash memory can be programmed via the JTAG port, Spy-Bi-Wire (SBW), the BSL, or in-system by the

CPU. The CPU can perform single-byte, single-word, and long-word writes to the flash memory. Features of the

flash memory include:

•

Flash memory has n segments of main memory and four segments of information memory (A to D) of

128 bytes each. Each segment in main memory is 512 bytes in size.

•

Segments 0 to n may be erased in one step, or each segment may be individually erased.

•

Segments A to D can be erased individually. Segments A to D are also calledinformation memory.

•

Segment A can be locked separately.

RAM Memory (Link to user's guide)

The RAM memory is made up of n sectors. Each sector can be completely powered down to reduce leakage;

however, all data is lost during power down. Features of the RAM memory include:

•

RAM memory has n sectors. The sizes of the sectors can be found inMemory Organization.

•

Each sector 0 to n can be complete disabled; however, all data in a sector is lost when it is disabled.

•

Each sector 0 to n automatically enters low-power retention mode when possible.

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