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MSC1210 Datasheet(PDF) 28 Page - Texas Instruments |
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MSC1210 Datasheet(HTML) 28 Page - Texas Instruments |
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28 / 83 page ![]() MSC1210 SBAS203F − MARCH 2002 − REVISED NOVEMBER 2004 www.ti.com 28 The MSC1210 allows the user to partition the Flash Memory between Program Memory and Data Memory. For instance, the MSC1210Y5 contains 32kB of Flash Memory on-chip. Through the HW configuration registers, the user can define the partition between Program Memory (PM) and Data Memory (DM), as shown in Table 3 and Table 4. The MSC1210 family offers four memory configurations, as shown. Table 3. MSC1210 Flash Partitioning HCR0 MSC1210Y2 MSC1210Y3 MSC1210Y4 MSC1210Y5 DFSEL PM DM PM DM PM DM PM DM 000 0kB 4kB 0kB 8kB 0kB 16kB 0kB 32kB 001 0kB 4kB 0kB 8kB 0kB 16kB 0kB 32kB 010 0kB 4kB 0kB 8kB 0kB 16kB 16kB 16kB 011 0kB 4kB 0kB 8kB 8kB 8kB 24kB 8kB 100 0kB 4kB 4kB 4kB 12kB 4kB 28kB 4kB 101 2kB 2kB 6kB 2kB 14kB 2kB 30kB 2kB 110 3kB 1kB 7kB 1kB 15kB 1kB 31kB 1kB 111 (default) 4kB 0kB 8kB 0kB 16kB 0kB 32kB 0kB NOTE: When a 0kB program memory configuration is selected, program execution is external. Table 4. MSC1210 Flash Memory Partitioning HCR0 MSC1210Y2 MSC1210Y3 MSC1210Y4 MSC1210Y5 DFSEL PM DM PM DM PM DM PM DM 000 0000 0400- 13FF 0000 0400- 23FF 0000 0400- 43FF 0000 0000- 83FF 001 0000 0400- 13FF 0000 0400- 23FF 0000 0400- 43FF 0000 0400- 83FF 010 0000 0400- 13FF 0000 0400- 23FF 0000 0400- 43FF 0000- 3FFF 0400- 43FF 011 0000 0400- 13FF 0000 0400- 23FF 0000- 1FFF 0400- 23FF 0000- 5FFF 0400- 23FF 100 0000 0400- 13FF 0000- 0FFF 0400- 13FF 0000- 2FFF 0400- 13FF 0000- 6FFF 0400- 13FF 101 0000- 07FF 0400- 0BFF 0000- 17FF 0400- 0BFF 0000- 37FF 0400- 0BFF 0000- 77FF 0400- 0BFF 110 0000- 0BFF 0400- 07FF 0000- 1BFF 0400- 07FF 0000- 3BFF 0400- 07FF 0000- 7BFF 0400- 07FF 111 (default) 0000- 0FFF 0000 0000- 1FFF 0000 0000- 3FFF 0000 0000- 7FFF 0000 NOTE: Program memory accesses above the highest listed address will access external program memory. It is important to note that the Flash Memory is readable and writable by the user through the MOVX instruction when configured as either Program or Data Memory (via the MXWS bit in the MWS, SFR 8Fh). This means that the user may partition the device for maximum Flash Program Memory size (no Flash Data Memory) and use Flash Program Memory as Flash Data Memory. This may lead to undesirable behavior if the PC points to an area of Flash Program Memory that is being used for data storage. Therefore, it is recommended to use Flash partitioning when Flash Memory is used for data storage. Flash partitioning prohibits execution of code from Data Flash Memory. Additionally, the Program Memory erase/write can be disabled through hardware configuration bits (HCR0), while still providing access (read/write/erase) to Data Flash Memory. The effect of memory mapping on Program and Data Memory is straightforward. The Program Memory is decreased in size from the top of internal Program Memory. Therefore, if the MSC1210Y5 is partitioned with 31kB of Flash Program Memory and 1kB of Flash Data Memory, external Program Memory execution will begin at 7C00h (versus 8000h for 32kB). The Flash Data Memory is added on top of the SRAM memory. Therefore, access to Data Memory (through MOVX) will access SRAM for addresses 0000h−03FFh and access Flash Memory for addresses 0400h−07FFh. Data Memory The MSC1210 can address 64kB of Data Memory. Scratchpad Memory provides 256 bytes in addition to the 64kB of Data Memory. The MOVX instruction is used to access the Data SRAM Memory. This includes 1,024 bytes of on-chip Data SRAM Memory. The data bus values do not appear on Port 0 (during data bus timing) for internal memory access. The MSC1210 also has on-chip Flash Data Memory which is readable and writable (depending on Memory Write Select register) during normal operation (full VDD range). This memory is mapped into the external Data Memory space directly above the SRAM. The MOVX instruction is used to write the flash memory. Flash memory must be erased before it can be written. Flash memory is erased in 128 byte pages. |
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