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XC2000 Datasheet(PDF) 98 Page - Infineon Technologies AG |
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XC2000 Datasheet(HTML) 98 Page - Infineon Technologies AG |
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98 / 647 page ![]() XC2000 Derivatives System Units (Vol. 1 of 2) Memory Organization Preliminary User’s Manual 3-36 V1.0, 2007-06 MemoryX2K, V1.1 retention, i.e. after a while they may toggle. This dangerous state can be detected with “read margins”. Reading with “hard read 0 margin” returns weak 0s as 1s and reading with “hard read 1 margin” returns weak 1s as 0s. Changing the read margin is done with the command sequence “Change Read Margin” and is reported by the status register “IMB_MAR”. In order to detect cells that will likely fail in the near future all used flash memory ranges can be read with both hard reads regularly. If both read values are the same and no read error occurs nothing has to be done. If this check fails there is still a good chance that the normal read will return the correct value (or at least has only a correctable one-bit error). After erasing the page this value can be programmed again to ensure long-term readability of this data. In case of using the page erase care must be taken not to exceed the drain disturb limit of the other pages of the same sector. 3.9.5.4 Protection Overview The flash memory supports read and write protection for the whole memory and separate write protection for each logical sector. The logical sector structure is depicted in Figure 3-6. Figure 3-6 Logical Sectors If read protection is installed and active, any flash read access is disabled in case of start after reset from external memory or from internal RAM. Debug access is as well disabled and thus the execution of injected OCDS instructions. In case of start after reset in flash_array_logsectors_diagram.vsd 256 KB Array Phys. Sector Number 0 63 Logical Grouping Logical Sector Address 0 63 4 8 12 16 32 48 Logical Sector Number 0 - 3 = 4 * 4 KB 4 = 16 KB 5 = 16 KB 6 = 12 KB/16 KB 7 = 64 KB 8 = 64 KB 9 = 64 KB Phys. Sector 15 Reserved in Flash 0 15 |
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