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S70FS01GS Datasheet(PDF) 96 Page - Cypress Semiconductor |
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S70FS01GS Datasheet(HTML) 96 Page - Cypress Semiconductor |
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96 / 141 page  S70FS01GS Document Number: 002-03833 Rev. *C Page 96 of 141 programmed in sequence, starting at the provided address within the page, without having any affect on the other bytes of the same page. Using the Page Program (PP) command to load an entire page, within the page boundary, will save overall programming time versus loading less than a page into the program buffer. The programming process is managed by the Flash memory device internal control logic. After a programming command is issued, the programming operation status can be checked using the Read Status Register-1 command. The WIP bit (SR1V[0]) will indicate when the programming operation is completed. The P_ERR bit (SR1V[6]) will indicate if an error occurs in the programming operation that prevents successful completion of programming. This includes attempted programming of a protected area. Figure 9.33 Page Program (PP 02h or 4PP 12h) Command Sequence Note: 1. A = MSB of address = A23 for PP 02h, or A31 for 4PP 12h CS# SCK SI SO Phase 7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 Instruction Address Input Data 1 Input Data 2 |
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