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W97AH6KB Datasheet(PDF) 44 Page - Winbond |
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W97AH6KB Datasheet(HTML) 44 Page - Winbond |
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44 / 127 page  W97AH6KB / W97AH2KB Publication Release Date: May 15, 2014 Revision: A01-001 - 44 - 7.4.14 Burst Write with Auto-Precharge If AP (CA0f) is HIGH when a Write Command is issued, the Write with Auto-Precharge function is engaged. The LPDDR2 SDRAM starts an Auto Precharge operation on the rising edge which is tWR cycles after the completion of the burst write. A new bank activate (command) may be issued to the same bank if both of the following two conditions are satisfied. ■ The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins. ■ The RAS cycle time (tRC) from the previous bank activation has been satisfied. 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 CA0-9 [Cmd] DQS T0 T1 T2 T3 T4 tRPpb tWR Bank A Col Addr Col Addr Bank A Row Addr Row Addr Nop Nop Nop Nop Nop Activate DIN A0 DIN A1 DIN A2 DIN A3 WL = 1 Write T5 T6 T7 T8 Nop Nop CK_t / CK_c DQS_c DQS_t |
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