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W97AH6KB Datasheet(PDF) 53 Page - Winbond

Part # W97AH6KB
Description  Four-bit prefetch DDR architecture
PDF  127 Pages
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Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond

W97AH6KB Datasheet(HTML) 53 Page - Winbond

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W97AH6KB / W97AH2KB
Publication Release Date: May 15, 2014
Revision: A01-001
- 53 -
7.4.17 Self Refresh Operation
The Self Refresh command can be used to retain data in the LPDDR2 SDRAM, even if the rest of the system is
powered down. When in the Self Refresh mode, the LPDDR2 SDRAM retains data without external clocking. The
LPDDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. The Self Refresh Command is
defined by having CKE LOW, CS_n LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the rising edge of the clock. CKE
must be HIGH during the previous clock cycle. A NOP command must be driven in the clock cycle following the
power-down command. Once the command is registered, CKE must be held LOW to keep the device in Self Refresh
mode.
LPDDR2-S4 devices can operate in Self Refresh in both the Standard or Extended Temperature Ranges. LPDDR2-
S4 devices will also manage Self Refresh power consumption when the operating temperature changes, lower at low
temperatures and higher temperatures.
Once the LPDDR2 SDRAM has entered Self Refresh mode, all of the external signals except CKE, are “don’t care”.
For proper self refresh operation, power supply pins (VDD1, VDD2, and VDDCA) must be at valid levels. VDDQ may be
turned off during Self-Refresh. Prior to exiting Self-Refresh, VDDQ must be within specified limits. VrefDQ and VrefCA
may be at any level within minimum and maximum levels (see section 8.1
“Absolute Maximum DC Ratings” table).
However prior to exit Self-Refresh, VrefDQ and VrefCA must be within specified limits (see section 8.2.1.1
“Recommended DC Operating Conditions” table). The SDRAM initiates a minimum of one all-bank refresh
command internally within tCKESR period once it enters Self Refresh mode. The clock is internally disabled during
Self Refresh Operation to save power. The minimum time that the LPDDR2 SDRAM must remain in Self Refresh
mode is tCKESR. The user may change the external clock frequency or halt the external clock one clock after Self
Refresh entry is registered; however, the clock must be restarted and stable before the device can exit Self Refresh
operation.
The procedure for exiting Self Refresh requires a sequence of commands. First, the clock shall be stable and within
specified limits for a minmum of 2 clock cycles prior to CKE going back HIGH. Once Self Refresh Exit is registered, a
delay of at least tXSR must be satisfied before a valid command can be issued to the device to allow for any internal
refresh in progress. CKE must remain HIGH for the entire Self Refresh exit period tXSR for proper operation except
for self refresh re-entry. NOP commands must be registered on each positive clock edge during the Self Refresh exit
interval tXSR.
The use of Self Refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, it is required that at least one Refresh
command (8 per-bank or 1 all-bank) is issued before entry into a subsequent Self Refresh.



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