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OR4 Datasheet(PDF) 75 Page - Lattice Semiconductor |
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OR4 Datasheet(HTML) 75 Page - Lattice Semiconductor |
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75 / 152 page ![]() Lattice Semiconductor 75 Data Sheet May, 2006 ORCA Series 4 FPGAs Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso- lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of this data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. The ORCA Series FPGAs include circuitry designed to protect the chips from damaging substrate injection currents and to prevent accumulations of static charge. Nevertheless, conventional precautions should be observed during storage, handling, and use to avoid exposure to excessive electrical stress. Table 34. Absolute Maximum Ratings Note: Overshoot and undershoot of -2V to (VIHMAX +2) volts is permitted for a duration of <20ns. Recommended Operating Conditions Table 35. Recommended Operating Conditions Note: 1. The maximum recommended junction temperature (TJ) during operation is 125 °C. 2. Timing parameters in this data sheet an ispLEVER are characterized under higher voltage and temperature conditions than the recom- mended operating conditions in this table. 3. The internal PLLs operate from the VDD33 power supply. This power supply should be well isolated from all other power supplies on the board for proper operation. Parameter Symbol Min Max Unit Storage Temperature Tstg –65 150 °C Power Supply Voltage with Respect to Ground VDD33 –0.3 4.2 V VDDIO –0.3 4.2 V VDD15 –0.3 2.0 V Input Signal with Respect to Ground VIN – 0.3 VDDIO + 0.3 V Signal Applied to High-impedance Output — – 0.3 VDDIO + 0.3 V Maximum Package Body (Soldering) Temperature — — 220 °C Parameter Symbol Min Max Unit Power Supply Voltage with Respect to Ground VDD33 3.0 3.6 V VDDIO 1.4 3.6 V VDD15 1.425 1.575 V Input Signal with Respect to Ground VIN – 0.3 VDDIO + 0.3 V Junction Temperature TJ –40 125 °C |
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