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HD6433713 Datasheet(PDF) 264 Page - Renesas Technology Corp |
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HD6433713 Datasheet(HTML) 264 Page - Renesas Technology Corp |
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264 / 324 page ![]() 14.5 Differences in Electrical Characteristics between HD6473714 and HD6433712/HD6433713/HD6433714 Table 14-12 shows the difference in electrical characteristics between the HD6473714 and HD6433712/HD6433713/HD6433714. Table 14-12 Differences in Electrical Characteristics between HD6473714 and HD6433712/HD6433713/HD6433714 Mask ROM Version ZTAT™ Version Item Symbol Test Conditions Min Typ Max Min Typ Max Unit Operation VCC 2.5 — 5.5 2.7 — 5.5 V range in subactive mode Input leakage |IIL| RES — — 1 ——40 µA current Input CIN P16/ EVENT — — 15 ——35 pF capacitance P17/Vdisp — — 30 ——20 RES — — 15 ——70 IOPE VCC VCC = 5 V, — 15 — — 17 — mA fOSC = 8 MHz VCC = 5 V, — 8 — — 9 — fOSC = 4 MHz VCC = 3 V, — 5 — — 6 — fOSC = 4 MHz IRES VCC VCC = 5 V, — 5 8 — 6 9 mA fOSC = 8 MHz VCC = 5 V, — 2.5 4 — 3 5 fOSC = 4 MHz VCC = 3 V, — 1.3 — — 1.5 — fOSC = 4 MHz ISLEEP VCC VCC = 5 V, — 2 3 — 2.5 3.5 fOSC = 8 MHz VCC = 5 V, — 1 1.5 — 1.5 2 fOSC = 4 MHz VCC = 3 V, — 0.6 — — 1 — fOSC = 4 MHz Applicable Pins Power dissipation when CPU operating in active mode Power dissipation during reset in active mode Power dissipation in sleep mode 253 |
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