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HD6433713 Datasheet(PDF) 102 Page - Renesas Technology Corp |
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HD6433713 Datasheet(HTML) 102 Page - Renesas Technology Corp |
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102 / 324 page ![]() 4.3 Programming The write, verify, and other modes are selected as shown in table 4-3 in PROM mode. Table 4-3 Mode Selection in PROM Mode Pin Mode CE OE VPP VCC EO7 to EO0 EA14 to EA0 Write L H VPP VCC Data input Address input Verify H L VPP VCC Data output Address input Programming disabled H H VPP VCC High impedance Address input Notation: L: Low level H: High level VPP:VPP level VCC:VCC level The specifications for writing and reading the on-chip PROM are identical to those for the standard HN27C256H EPROM. 4.3.1 Writing and Verifying An efficient, high-speed programming method is provided for writing and verifying the PROM data. This method achieves high speed without voltage stress on the device and without lowering the reliability of written data. H'FF data is written in unused address areas. The basic flow of this high-speed programming method is shown in figure 4-4. Table 4-4 and table 4-5 give the electrical characteristics in programming mode. Figure 4-5 shows a timing diagram. 91 |
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