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DP8344 Datasheet(PDF) 33 Page - National Semiconductor (TI) |
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DP8344 Datasheet(HTML) 33 Page - National Semiconductor (TI) |
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33 / 184 page ![]() 20 CPU Description (Continued) When the Four T-state Read mode is selected ( 4TR e 1) a second TX state is inserted before T2 and the timing of the read strobe READ is changed such that READ falls one-half T-state after the beginning of the second TX Fig- ure 2-18 shows a Four T-state Read of data memory The extra half T-state before READ falls allows more time for the BCP to TRI-STATE the AD lines before the memory circuit begins driving those lines The four T-state program control instruction timing is shown in Figure 2-19 The instruction has two TX states inserted between T1 and T2 ICLK rises at the beginning of T1 and falls at the end of the second TX The next instruction ad- dress becomes valid halfway through the second TX The four T-state two word program control instruction timing is the same as two consecutive two T-state instructions and is shown in Figure 2-20 This timing describes the minimum cycle time required by each type of instruction The BCP can be slowed down by changing the number of wait states selected in the Device Control Register DCR The BCP can be programmed for up to three instruction memory wait states (instruction wait states) and seven data memory wait states (data wait states) Instruction wait states affect all instruction types while data wait states affect only data memory access in- structions Bits three and four in DCR control the number of instruction wait states and bits zero one and two are used to select the number of data wait states The relation- ships between the control bits and the number of wait states selected are shown in Table 2-24 and Table 2-25 The BCP is configured with three instruction wait states and seven data wait states and 4TR set to zero after reset A write to DCR 43 to change the number of instruction wait states takes effect on the following instruction if that instruc- tion is a three T-state or four T-state program control in- struction For the other instruction types the new number of instruction wait states will take effect on the instruction fol- TLF9336 – H5 FIGURE 2-18 Four T-state Data Memory Read Instruction 4TR e 1 33 |
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