TPS62870 datasheet(11/66 Pages) TI2

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6.5 Electrical Characteristics (continued)

over operating junction temperature (TJ = –40°C to 125°C) and VIN = 2.7V to 6V. Typical values at VIN = 3.3V and TJ = 25°C

(unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VT+

Positive-going power good threshold

voltage (output overvoltage)

104

106

108 %VOUT

VT–

Negative-going power good threshold

voltage (output overvoltage)

102

104

106 %VOUT

VOL

Low-level output voltage (PG)

IOL = 1mA

0.3

IOH

High-level output current (PG)

VOH = 3.3V

200

VIH

High-level input voltage (PG)

Device configured as a secondary device

in stacked operation

0.8

VIL

Low-level input voltage (PG)

Device configured as a secondary device

in stacked operation

0.4

IIH

High-level input current (PG)

Device configured as a secondary device

in stacked operation

µA

IIL

Low-level input current (PG)

Device configured as a secondary device

in stacked operation

–1

µA

td(PG)

Deglitch time (PG)

High-to-low or low-to-high transition on

the PG pin

µs

OUTPUT

VOUT

Output accuracy

VIN ≥ VOUT + 1.4V

–1

IIB

Input bias current (GOSNS)

V(GOSNS) = –100mV to 100mV

–6

µA

IIB

Input bias current (VOSNS)

V(VOSNS) = 3.3V, VIN = 6V

µA

VICR

Input common-mode range (GOSNS)

–100

100

Output discharge current in constant

current mode

V(VOSNS) = 2V

115

200

RDIS

Output discharge resistance in resistive

discharge mode

V(VOSNS) ≤ 0.5V

fSW

Switching frequency (SW)

fSW = 1.5MHz, PWM operation, VIN 3.3V,

VOUT = 0.75V

1.35

1.5

1.65

MHz

fSW = 2.25MHz, PWM operation, VIN 3.3V,

VOUT = 0.75V

2.025

2.25

2.475

fSW = 2.5MHz, PWM operation, VIN 3.3V,

VOUT = 0.75V

2.25

2.5

2.75

fSW = 3MHz, PWM operation, VIN 3.3V,

VOUT = 0.75V

2.7

3.3

fmod

Frequency of the spread-spectrum sweep

fsw/2048

kHz

ΔfSW

Switching frequency variation during

spread-spectrum operation

±10%

Emulated current time constant

12.5

µs

rDS(on)

High-side FET static on-state resistance

VIN = 3.3V

mΩ

rDS(on)

Low-side FET static on-state resistance

VIN = 3.3V

4.1

9.4

mΩ

I(SW)(off)

High-side FET off-state current

VIN = 6V, V(SW) = 0V, TJ = 25°C

–1

µA

Low-side FET off-state current

VIN = 6V, V(SW) = 6V, TJ = 25°C

100

ILIM

High-side FET forward

switch current limit, DC

TPS62870

TPS62871

TPS62872

TPS62873

Low-side FET negative current limit, DC

7.5

www.ti.com

TPS62870, TPS62871, TPS62872, TPS62873

SLVSGC5E – JANUARY 2023 – REVISED OCTOBER 2025

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