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DM504 Datasheet(PDF) 152 Page - Texas Instruments |
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DM504 Datasheet(HTML) 152 Page - Texas Instruments |
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152 / 211 page ![]() 152 DM504 SPRS977A – NOVEMBER 2016 – REVISED JANUARY 2017 www.ti.com Submit Documentation Feedback Detailed Description Copyright © 2016–2017, Texas Instruments Incorporated • OCD calibration for DDR2 • CAS Read Latency of 2 and CAS Write Latency of 1 for DDR2 • DLL disabling from EMIF side For more information, see section EMIF Controller in chapter Memory Subsystem of the device TRM. 6.6.2 ELM When reading from NAND flash memories, some level of error-correction is required. In the case of NAND modules with no internal correction capability, sometimes referred to as bare NANDs, the correction process is delegated to the memory controller. The ELM supports the following features: • 4, 8, and 16 bits per 512-byte block error location based on BCH algorithm • Eight simultaneous processing contexts • Page-based and continuous modes • Interrupt generation when error location process completes: – When the full page has been processed in page mode – For each syndrome polynomial (checksum-like information) in continuous mode For more information, see section Error Location Module in chapter Memory Subsystem of the device TRM. 6.6.3 OCMC There is one on-chip memory controller (OCMC) in the device. The OCM Controller supports the following features: • L3_MAIN data interface: – Used for maximum throughput performance – 128-bit data bus width – Burst supported • L4 interface: – Used for access to configuration registers – 32-bit data bus width – Only single accesses supported – The L4 associated OCMC clock is two times lower than the L3 associated OCMC clock • Error correction and detection: – Single error correction and dual error detection – 9-bit Hamming error correction code (ECC) calculated on 128-bit data word which is concatenated with memory address bits – Hamming distance of 4 – Enable/Disable mode control through a dedicated register – Single bit error correction on a read transaction – Exclusion of repeated addresses from correctable error address trace history – ECC valid for all write transactions to an enabled region – Sub-128-bit writes supported via read modify write • ECC Error Status Reporting: – Trace history buffer (FIFO) with depth of 4 for corrected error address – Trace history buffer with depth of 4 for non correctable error address and also including double error detection – Interrupt generation for correctable and uncorrectable detected errors |
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