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TC35680FSG Datasheet(PDF) 73 Page - Toshiba Semiconductor

Part # TC35680FSG
Description  TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC
PDF  91 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC35680FSG Datasheet(HTML) 73 Page - Toshiba Semiconductor

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TC35680FSG-002/TC35681FSG-002
73
2019-04-04
5.6. RF Characteristics (Design Target Values)
The RF characteristics are based on the following conditions, unless otherwise specified.
Ta = 25 °C
VBAT = 3.0 V
XOIN = 32 MHz (The frequency accuracy should be adjusted to ±2 ppm at room temperature)
PAOUT = 8 dBm
Table 5-8 shows the RF transmission characteristics which are compliant with the Bluetooth® Core Specification Version 5.0
standard. Table 5-9 shows the RF reception characteristics. Some values in those tables are design target values.
Table 5-8 RF transmission characteristics
Item
Packet
Modulation
condition
Channel
Condition
Min.
Typ.
Max.
Unit
Output Power
255 octets
PRBS9
0, 12,
19, 39
Peak (Ppk)
—
0.4
Pavg+
3 dB
dBm
average (Pavg)
—
8
—
In-band Emissions
Uncoded data at 1 Ms/s
255 octets
PRBS9
0, 12,
19, 39
-4 MHz
—
-49
-30
dBm
-3 MHz
—
-41
-30
-2 MHz
—
-40
-20
2 MHz
—
-40
-20
3 MHz
—
-41
-30
4 MHz
—
-49
-30
In-band Emissions
at 2 Ms/s
255 octets
PRBS9
0, 12,
19, 39
-6 MHz
—
-52
-30
dBm
-5 MHz
—
-49
-20
-4 MHz
—
-50
-20
4 MHz
—
-50
-20
5 MHz
—
-50
-20
6 MHz
—
-52
-30
Modulation Characteristics
Uncoded data at 1 Ms/s
255 octets
11110000
0, 12,
19, 39
Δf1avg
225
244
275
kHz
10101010
Δf2max
185
204
—
kHz
—
Δf2avg/Δf1avg
0.8
0.90
—
Ratio
Modulation Characteristics
at 2 Ms/s
255 octets
11110000
0, 12,
19, 39
Δf1avg
450
482
550
kHz
10101010
Δf2max
370
415
—
kHz
—
Δf2avg/Δf1avg
0.8
0.90
—
Ratio
Carrier frequency offset
255 octets
10101010
0, 12,
19, 39
average
-150
4
150
kHz
Carrier frequency drift
255 octets
10101010
worst
—
4
50
kHz
Carrier frequency drift Rate
LE Coded (S=8)
255 octets
11110000
Absolute maximum
—
6
19.2
kHz/48
μs



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