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TMS320C80GF Datasheet(PDF) 78 Page - Texas Instruments |
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TMS320C80GF Datasheet(HTML) 78 Page - Texas Instruments |
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78 / 171 page ![]() TMS320C80 DIGITAL SIGNAL PROCESSOR SPRS023B – JULY 1994 – REVISED OCTOBER 1997 75 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 page sizing (continued) Table 33. Page-Size Selection PS[3:0] ADDRESS BITS COMPARED PAGE SIZE (BYTES) 0 0 0 0 A(31:6) 64 0 0 0 1 A(31:7) 128 0 0 1 0 A(31:8) 256 0 0 1 1 A(31:9) 512 0 1 0 0 A(31:10) 1K 0 1 0 1 A(31:18) 256K 0 1 1 0 A(31:19) 512K 0 1 1 1 A(31:20) 1M 1 0 0 0 A(31:0) 1–8† 1 0 0 1 A(31:11) 2K 1 0 1 0 A(31:12) 4K 1 0 1 1 A(31:13) 8K 1 1 0 0 A(31:14) 16K 1 1 0 1 A(31:15) 32K 1 1 1 0 A(31:16) 64K 1 1 1 1 A(31:17) 128K † PS[3:0] = 1000 disables page-mode cycles so that the effective page size is the same as the bus size block write support The TMS320C80 supports three modes of VRAM block write. The block-write mode is dynamically selectable so that software may specify block writes without knowing what type of block write the addressed memory supports. Block writes are supported only for 64-bit buses. During block-write and load-color-register cycles, the BS[1:0] inputs determine which block mode will be used (see Table 34). Table 34. Block-Write Selection BS[1:0] BLOCK-WRITE MODE 0 0 Simulated 0 1 Reserved 1 0 4x 1 1 8x SDRAM support The TMS320C80 provides direct support for synchronous DRAM (SDRAM), VRAM (SVRAM), and graphics RAM (SGRAM). During ’C80 power-up refresh cycles, the external system must signal the presence of these memories by inputting a CT2 value of 0. This causes the ’C80 to perform special deactivate (DCAB) and mode register set (MRS) commands to initialize the synchronous RAMs. Figure 60 shows the MRS value generated by the ’C80. Note that read latency 4 timing programs the mode register for a read latency of 3. See Figure 60 for a listing of MRS values. |
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