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33903 Datasheet(PDF) 28 Page - Freescale Semiconductor, Inc |
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33903 Datasheet(HTML) 28 Page - Freescale Semiconductor, Inc |
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28 / 104 page ![]() Analog Integrated Circuit Device Data 28 Freescale Semiconductor 33903/4/5 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS INTERRUPT INT pulse duration (refer to SPI for selection. Guaranteed by design) short (25 to 125 °C) short (-40 °C) long (25 to 125 °C) long (-40 °C) tINT-PULSE 20 20 90 90 25 25 100 100 35 40 130 140 μs STATE DIGRAM TIMINGS Delay for SPI Timer A, Timer B or Timer C write command after entering Normal Mode (No command should occur within tD_NM. tD_NM delay definition: from CS rising edge of “Go to Normal Mode (i.e. 0x5A00)” command to CS falling edge of “Timer write” command) tD_NM 60 - - μs Tolerance for: watchdog period in all modes, FWU delay, Cyclic sense period and active time, Cyclic Interrupt period, LP Mode over-current (unless otherwise noted)(26) tTIMING-ACC -10 - 10 % CAN DYNAMIC CHARACTERISTICS TXD Dominant State Timeout tDOUT 300 600 1000 µs Bus dominant clamping detection tDOM 300 600 1000 µs Propagation loop delay TXD to RXD, recessive to dominant (Fast slew rate) tLRD 60 120 210 ns Propagation delay TXD to CAN, recessive to dominant tTRD - 70 110 ns Propagation delay CAN to RXD, recessive to dominant tRRD - 45 140 ns Propagation loop delay TXD to RXD, dominant to recessive (Fast slew rate) tLDR 100 120 200 ns Propagation delay TXD to CAN, dominant to recessive tTDR - 75 150 ns Propagation delay CAN to RXD, dominant to recessive tRDR - 50 140 ns Loop time TXD to RXD, Medium Slew Rate (Selected by SPI) Recessive to Dominant Dominant to Recessive tLOOP-MSL - - 200 200 - - ns Loop time TXD to RXD, Slow Slew Rate (Selected by SPI) Recessive to Dominant Dominant to Recessive tLOOP-SSL - - 300 300 - - ns CAN Wake-Up filter time, single dominant pulse detection(23) (See Figure 37) tCAN-WU1-F 0.5 2.0 5.0 μs CAN Wake-Up filter time, 3 dominant pulses detection(24) tCAN-WU3-F 300 - - ns CAN Wake-Up filter time, 3 dominant pulses detection timeout(25) (See Figure 38) tCAN-WU3-TO - - 120 μs Notes 23. No Wake-Up for single pulse shorter than tCAN-WU1 min. Wake-up for single pulse longer than tCAN-WU1 max. 24. Each pulse should be greater than tCAN-WU3-F min. Guaranteed by design, and device characterization. 25. The 3 pulses should occur within tCAN-WU3-TO. Guaranteed by design, and device characterization. 26. Guaranteed by design. Table 5. Dynamic Electrical Characteristics Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 28 V, -40 °C ≤ TA ≤ 125 °C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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