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33903 Datasheet(PDF) 17 Page - Freescale Semiconductor, Inc |
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33903 Datasheet(HTML) 17 Page - Freescale Semiconductor, Inc |
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17 / 104 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 17 33903/4/5 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 3. Maximum Ratings All voltages are referenced to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value Unit ELECTRICAL RATINGS(2) Supply Voltage at VSUP/1 and VSUP2 Normal Operation (DC) Transient Conditions (Load Dump) VSUP1/2 VSUP1/2TR -0.3 to 28 -0.3 to 40 V DC voltage on LIN/1 and LIN2 Normal Operation (DC) Transient Conditions (Load Dump) VBUSLIN VBUSLINTR -28 to 28 -28 to 40 V DC voltage on CANL, CANH, SPLIT Normal Operation (DC) Transient Conditions (Load Dump) VBUS VBUSTR -28 to 28 -32 to 40 V DC Voltage at SAFE Normal Operation (DC) Transient Conditions (Load Dump) VSAFE VSAFETR -0.3 to 28 -0.3 to 40 V DC Voltage at I/O-0, I/O-1, I/O-2, I/O-3 (LIN-T Pins) Normal Operation (DC) Transient Conditions (Load Dump) VI/O VI/OTR -0.3 to 28 -0.3 to 40 V DC voltage on TXD-L, TXD-L1 TXD-L2, RXD-L, RXD-L1, RXD-L2 VDIGLIN -0.3 to VDD +0.3 V DC voltage on TXD, RXD(4) VDIG -0.3 to VDD +0.3 V DC Voltage at INT VINT -0.3 to 10 V DC Voltage at RST VRST -0.3 to VDD +0.3 V DC Voltage at MOSI, MSIO, SCLK and CS VRST -0.3 to VDD +0.3 V DC Voltage at MUX-OUT VMUX -0.3 to VDD +0.3 V DC Voltage at DBG VDBG -0.3 to 10 V Continuous current on CANH and CANL ILH 200 mA DC voltage at VDD, 5V-CAN, VAUX, VCAUX VREG -0.3 to 5.5 V DC voltage at VBASE(3) and VBAUX VREG -0.3 to 40 V DC voltage at VE(4) VE -0.3 to 40 V DC voltage at VSENSE VSENSE -28 to 40 V Notes 2. The voltage on non-VSUP pins should never exceed the VSUP voltage at any time or permanent damage to the device may occur. 3. If the voltage delta between VSUP/1/2 and VBASE is greater than 6.0 V, the external VDD ballast current sharing functionality may be damaged. 4. Potential Electrical Over Stress (EOS) damage may occur if RXD is in contact with VE while the device is ON. |
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