33903 datasheet(29/104 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33903/4/5

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC ACCORDING TO LIN PHYSICAL

LAYER SPECIFICATION

BUS LOAD RBUS AND CBUS 1.0 NF / 1.0 KΩ, 6.8 NF / 660 Ω, 10 NF / 500 Ω. SEE Figure 20, PAGE 31.

Duty Cycle 1:

THREC(MAX) = 0.744 * VSUP

THDOM(MAX) = 0.581 * VSUP

D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V ≤ VSUP ≤ 18 V

0.396

Duty Cycle 2:

THREC(MIN) = 0.422 * VSUP

THDOM(MIN) = 0.284 * VSUP

D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V ≤ VSUP ≤ 18 V

0.581

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER

SPECIFICATION

BUS LOAD RBUS AND CBUS 1.0 NF / 1.0 KΩ, 6.8 NF / 660 Ω, 10 NF / 500 Ω. MEASUREMENT THRESHOLDS. SEE Figure 21, PAGE 32.

Duty Cycle 3:

THREC(MAX) = 0.778 * VSUP

THDOM(MAX) = 0.616 * VSUP

D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V ≤ VSUP ≤ 18 V

0.417

Duty Cycle 4:

THREC(MIN) = 0.389 * VSUP

THDOM(MIN) = 0.251 * VSUP

D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V ≤ VSUP ≤ 18 V

0.590

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR FAST SLEW RATE

LIN Fast Slew Rate (Programming Mode)

SRFAST

μs

LIN PHYSICAL LAYER: CHARACTERISTICS AND WAKE-UP TIMINGS

VSUP FROM 7.0 TO 18 V, BUS LOAD RBUS AND CBUS 1.0 NF / 1.0 KΩ, 6.8 NF / 660 Ω, 10 NF / 500 Ω. SEE Figure 20, PAGE 31.

Propagation Delay and Symmetry (See Figure 20, page 31 and Figure 21,

page 32)

Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)

Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR

tREC_PD

tREC_SYM

-2.0

4.2

6.0

2.0

μs

Bus Wake-up Deglitcher (LP VDD OFF and LP VDD ON modes) (See Figure 22,

page 31 for LP VDD OFF Mode and Figure 23, page 32 for LP Mode)

tPROPWL

μs

Bus Wake-up Event Reported

From LP VDD OFF Mode

From LP VDD ON Mode

tWAKE_LPVDD

OFF

tWAKE_LPVDD

1.0

1500

μs

TXD Permanent Dominant State Delay (Guaranteed by design)

tTXDDOM

0.65

1.0

1.35

Table 5. Dynamic Electrical Characteristics

Characteristics noted under conditions 5.5 V

≤ VSUP ≤ 28 V, -40 °C ≤ TA ≤ 125 °C, GND = 0 V, unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

33903 Datasheet(PDF) 29 Page - Freescale Semiconductor, Inc

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