TMS320C80GF datasheet(142/171 Pages) TI

142 / 171 page

TMS320C80

DIGITAL SIGNAL PROCESSOR

SPRS023B – JULY 1994 – REVISED OCTOBER 1997

139

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

absolute maximum ratings over specified temperature ranges (unless otherwise noted)†

Supply voltage range, VDD (see Note 1)

– 0.3 V to 4 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, VI

– 0.3 V to 4 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output voltage range

– 0.3 V to 4 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, TC

°C to 85°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

–55

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

recommended operating conditions

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3.135

3.3

3.465

VSS

Supply voltage (see Note 2)

IOH

High-level output current

– 400

µA

IOL

Low-level output current

Operating case temperature

°C

NOTE 2: In order to minimize noise on VSS, care should be taken to provide a minimum inductance path between the VSS pins and system ground.

electrical characteristics over recommended ranges of supply voltage and operating case

temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS‡

MIN

TYP§

MAX

UNIT

VIH

High-level input voltage

VDD + 0.3

VIL

Low-level input voltage

– 0.3

0.8

VOH

High-level output voltage

VDD = MIN,

IOH = MAX

2.6

VOL

Low-level output voltage

VDD = MAX,

IOH = MIN

0.6

Output current, leakage (high impedance)

VDD = MAX,

VO = 2.8 V

µA

,g ( g

)

(except EMU0 and EMU1)

VDD = MAX,

VO = 0.6 V

– 20

µA

Input current (except TCK, TDI, and TMS)

VI = VSS to VDD

±20

µA

VDD = MAX,

60 MHz

1.2#

2.5#

IDD

Supply current (see Note 3)

VDD = MAX,

50 MHz

1.0#

2.3#

VDD = MAX,

40 MHz

0.9#

1.9#

Input capacitance

Output capacitance

‡ For conditions shown as MIN / MAX, use the appropriate value specified under the recommended operating conditions.

§ All typical values are at VDD = 3.3 V, ambient air temperature = 25°C

¶ Typical steady-state VOH will not exceed VDD

# Parameter value is representative of revision 4.x and higher devices.

NOTE 3: Maximum supply current is derived from a test case that generates the theoretical maximum data flow using a worst case checkerboard

data pattern on a sustained cycle by cycle basis. Actual maximum IDD varies in real applications based on internal and external data

flow and transitions. Typical supply current is derived from a test case which attempts to emulate typical use conditions of the on-chip

processors with random data. Typical IDD varies from application to application based on data flow and transitions and on-chip processor

utilization.

TMS320C80GF Datasheet(PDF) 142 Page - Texas Instruments

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