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SC1100 Datasheet(PDF) 280 Page - National Semiconductor (TI) |
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SC1100 Datasheet(HTML) 280 Page - National Semiconductor (TI) |
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280 / 348 page  www.national.com 280 Revision 1.1 7.0 Electrical Specifications This chapter provides information about: • General electrical specifications • DC characteristics • AC characteristics All voltage values in this chapter are with respect to VSS unless otherwise noted. 7.1 GENERAL SPECIFICATIONS 7.1.1 Power/Ground Connections and Decoupling When designing in the SC1100, use standard high fre- quency design techniques to reduce parasitic effects. For example: • Filter the DC power leads with low-inductance decou- pling capacitors. • Use low-impedance traces. National Semiconductor’s application note “Geode SC1100 Information Appliance On A Chip: Layout Recommenda- tions” provides detailed guidelines for producing optimal PCB layouts. 7.1.2 Absolute Maximum Ratings Stresses beyond those indicated in the following table may cause permanent damage to the SC1100, reduce device reliability and result in premature failure, even when there is no immediately apparent sign of failure. Prolonged expo- sure to conditions at or near the absolute maximum ratings may also result in reduced device life span and reduced reliability. Note: The values in the following table are stress ratings only. They do not imply that operation under other conditions is impossible. Table 7-1. Absolute Maximum Ratings Symbol Parameter Min Max Unit Comments TCASE Operating case temperature1 -10 110 oC TSTORAGE Storage temperature2 -45 125 oC VCC Supply voltage See Table 7-2 V VMAX Voltage on 5V tolerant balls -0.5 6.0 V Others3 4 -0.5 4.2 V IIK Input clamp current1 -0.5 10 mA IOK 1 Output clamp current 25 mA 1. Power applied - no clocks. 2. No bias. 3. Voltage min is -0.8V with a transient voltage of 20 ns or less. 4. Voltage max is 4.0V with a transient voltage of 20 ns or less. |
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