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GX1 Datasheet(PDF) 110 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # GX1
Description  Processor Series Low Power Integrated x86 Solution
PDF  247 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

GX1 Datasheet(HTML) 110 Page - National Semiconductor (TI)

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110
Revision 1.0
Integrated Functions (Continued)
4.3.3
SDRAM Commands
This subsection discusses the SDRAM commands sup-
ported by the memory controller. Table 4-12 summarizes
these commands followed by detailed operational informa-
tion regarding each command. Refer to the SDRAM manu-
facturer’s specification for more information on component
banks..
MRS — The Mode Register Set command defines the spe-
cific mode of operation of the SDRAM. This definition
includes the selection of burst length, burst type, and CAS
latency. CAS latency is the delay, in clock cycles, between
the registration of a read command and the availability of
the first piece of output data.
The burst length is programmed by address bits MA[2:0],
the burst type by address bit MA3 and the CAS latency by
address bits MA[6:4].
The memory controller only supports a burst length of two
and burst type of interleave.
The field value on MA[12:0] and BA[1:0] during the MRS
cycle are as shown in Table 4-13.
PRE — The precharge command is used to deactivate the
open row in a particular component bank or the open row
in all (2 or 4, device dependent) component banks.
Address pin MA10 determines whether one or all compo-
nent banks are to be precharged. In the case where only
one component bank is to be precharged, BA[1:0] selects
which bank. Once a component bank has been pre-
charged, it is in the Idle state and must be activated prior to
any read or write commands.
Table 4-12. Basic Command Truth Table
Name
Command
CS
RAS
CAS
WE
MRS
Mode Register Set
L
L
L
L
PRE
Bank Precharge
L
L
H
L
ACT
Bank activate/row-
address entry
LL
H
H
WRT
Column address
entry/Write opera-
tion
LH
L
L
READ
Column address
entry/Read opera-
tion
LH
L
H
DESL
Control input inhibit/
No operation
HX
X
X
RFSH1
1.
This command is CBR (CAS-before-RAS) refresh when CKE
is high and self refresh when CKE is low.
CBR Refresh or
Auto Refresh
LL
L
H
Table 4-13. Address Line Programming during MRS Cycles
BA[1:0]
MA[12:7]
MA[6:4]
MA3
MA[2:0]
00
000000
CAS Latency:
000 = Reserved
010= 2CLK
100= 4CLK
110= 6CLK
001= 1CLK
011= 3CLK
101= 5CLK
111= 7CLK
1
Burst type is always
interleave.
001
Burst length is always 2.
128-bit transfer.



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