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GX1 Datasheet(PDF) 110 Page - National Semiconductor (TI) |
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GX1 Datasheet(HTML) 110 Page - National Semiconductor (TI) |
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110 / 247 page ![]() www.national.com 110 Revision 1.0 Integrated Functions (Continued) 4.3.3 SDRAM Commands This subsection discusses the SDRAM commands sup- ported by the memory controller. Table 4-12 summarizes these commands followed by detailed operational informa- tion regarding each command. Refer to the SDRAM manu- facturer’s specification for more information on component banks.. MRS — The Mode Register Set command defines the spe- cific mode of operation of the SDRAM. This definition includes the selection of burst length, burst type, and CAS latency. CAS latency is the delay, in clock cycles, between the registration of a read command and the availability of the first piece of output data. The burst length is programmed by address bits MA[2:0], the burst type by address bit MA3 and the CAS latency by address bits MA[6:4]. The memory controller only supports a burst length of two and burst type of interleave. The field value on MA[12:0] and BA[1:0] during the MRS cycle are as shown in Table 4-13. PRE — The precharge command is used to deactivate the open row in a particular component bank or the open row in all (2 or 4, device dependent) component banks. Address pin MA10 determines whether one or all compo- nent banks are to be precharged. In the case where only one component bank is to be precharged, BA[1:0] selects which bank. Once a component bank has been pre- charged, it is in the Idle state and must be activated prior to any read or write commands. Table 4-12. Basic Command Truth Table Name Command CS RAS CAS WE MRS Mode Register Set L L L L PRE Bank Precharge L L H L ACT Bank activate/row- address entry LL H H WRT Column address entry/Write opera- tion LH L L READ Column address entry/Read opera- tion LH L H DESL Control input inhibit/ No operation HX X X RFSH1 1. This command is CBR (CAS-before-RAS) refresh when CKE is high and self refresh when CKE is low. CBR Refresh or Auto Refresh LL L H Table 4-13. Address Line Programming during MRS Cycles BA[1:0] MA[12:7] MA[6:4] MA3 MA[2:0] 00 000000 CAS Latency: 000 = Reserved 010= 2CLK 100= 4CLK 110= 6CLK 001= 1CLK 011= 3CLK 101= 5CLK 111= 7CLK 1 Burst type is always interleave. 001 Burst length is always 2. 128-bit transfer. |
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