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SC1100 Datasheet(PDF) 287 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # SC1100
Description  Geode??Information Appliance On a Chip
PDF  348 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

SC1100 Datasheet(HTML) 287 Page - National Semiconductor (TI)

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Revision 1.1
287
www.national.com
Electrical Specifications (Continued)
7.2.1
INAB DC Characteristics
7.2.2
INBTN DC Characteristics
7.2.3
INPCI DC Characteristics
(Note that the buffer type for PCICLK, ball AA23, is INT - not INPCI.)
7.2.4
INT DC Characteristics
Symbol
Parameter
Min
Max
Unit
Comments
VIH
Input High Voltage
1.4
V
VIL
Input Low Voltage
-0.51
1.
Not 100% tested.
0.8
V
IIL
Input Leakage Current
10
µA
VIN = VIO
-10
µA
VIN = VSS
VHIS
Input hysteresis
150
mV
Symbol
Parameter
Min
Max
Unit
Comments
VIH
Input High Voltage
2.0
VSB+0.5
1
1.
Not 100% tested.
V
VIL
Input Low Voltage
-0.51
0.8
V
IIL
Input Leakage Current
5
µA
VIN = VSB
-36
µA
VIN = VSS
VHIS
Input Hysteresis1
200
mV
Symbol
Parameter
Min
Max
Unit
Comments
VIH
Input High Voltage
0.5VIO
VIO+0.5
1
1.
Not 100% tested.
V
VIL
Input Low Voltage
-0.51
0.3VIO
V
VIPU
Input Pull-up Voltage2
2.
Not 100% tested. This parameter indicates the minimum voltage to which pull-up resistors are calculated in order to pull
a floated network.
0.7VIO
V
lIL
Input Leakage Current3,4
3.
Input leakage currents include Hi-Z output leakage for all bidirectional buffers with TRI-STATE outputs.
4.
See Exceptions 2 and 3 in Section 7.2.13.1 on page 290.
+/-10
µs
0 < VIN < VIO
Symbol
Parameter
Min
Max
Unit
Comments
VIH
Input High Voltage
2.0
VIO+0.5
1
1.
Not 100% tested.
V
VIL
Input Low Voltage
-0.51
0.8
V
IIL
Input Leakage Current
10
µs
VIN = VIO
−10
µs
VIN = VSS



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